document number: 91 082 www.vishay.com s11-0512-rev. b, 21-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet IRF9620, sihf9620 vishay siliconix features ? dynamic dv/dt rating ? p-channel ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance thro ughout the industry. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. i sd ? - 3.5 a, di/dt ? 95 a/s, v dd ? v ds , t j ? 150 c. c. 1.6 mm from case. product summary v ds (v) - 200 r ds(on) ( ? )v gs = - 10 v 1.5 q g (max.) (nc) 22 q gs (nc) 12 q gd (nc) 10 configuration single s g d p-channel mosfet to-220ab g d s available rohs* compliant ordering information package to-220ab lead (pb)-free IRF9620pbf sihf9620-e3 snpb IRF9620 sihf9620 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 200 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d - 3.5 a t c = 100 c - 2.0 pulsed drain current a i dm - 14 linear derating factor 0.32 w/c maximum power dissipation t c = 25 c p d 40 w peak diode recovery dv/dt b dv/dt - 5.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 c mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91082 2 s11-0512-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF9620, sihf9620 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -3.1 specifications (t j = 25 c, unless otherwise noted) parameter symbol test co nditions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = - 250 a - 200 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = - 1 ma - - 0.22 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2.0 - - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = - 200 v, v gs = 0 v - - - 100 a v ds = - 160 v, v gs = 0 v, t j = 125 c - - - 500 drain-source on-state resistance r ds(on) v gs = - 10 v i d = - 1.5 a b --1.5 ? forward transconductance g fs v ds = - 50 v, i d = - 1.5 a b 1.0 - - s dynamic input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1.0 mhz, see fig. 5 - 350 - pf output capacitance c oss - 100 - reverse transfer capacitance c rss -30- total gate charge q g v gs = - 10 v i d = - 4.0 a, v ds = - 160 v, see fig. 11 and 18 b --22 nc gate-source charge q gs --12 gate-drain charge q gd --10 turn-on delay time t d(on) v dd = - 100 v, i d = - 1.5 a, r g = 50 ? , r d = 67 ?? , see fig. 17 b -15- ns rise time t r -25- turn-off delay time t d(off) -20- fall time t f -15- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --- 3.5 a pulsed diode forward current a i sm --- 14 body diode voltage v sd t j = 25 c, i s = - 3.5 a, v gs = 0 v b --- 7.0 v body diode reverse recovery time t rr t j = 25 c, i f = - 3.5 a, di/dt = 100 a/s b - 300 450 ns body diode reverse recovery charge q rr -1.92.9c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91 082 www.vishay.com s11-0512-rev. b, 21-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF9620, sihf9620 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical transfer characteristics fig. 3 - typical saturation characteristics fig. 4 - maximum safe operating area fig. 5 - maximum effective transient thermal impedance, junction-to-case vs. pulse duration 91082_01 80 s pulse test v ds , drain-to-source voltage (v) i d , drain current (a) - 10 - 5 v gs = - 10, - 9, - 8, - 7 v - 4 v - 6 v - 5 v - 4 0 - 1 - 2 - 3 0 - 50 - 40 - 30 - 20 91082_02 v gs , gate-to-source voltage (v) i d , drain current (a) - 2 - 5 - 4 0 - 1 - 2 - 3 0 - 10 - 8 - 6 - 4 80 s pulse test v ds > i d(on) x r ds(on) max. t j = - 55 c t j = 25 c t j = 125 c 91082_03 v ds , drain-to-source voltage (v) i d , drain current (a) - 1 - 5 - 4 0 - 1 - 2 - 3 0 - 5 - 4 - 3 - 2 80 s pulse test v gs = - 10, - 9, - 8, - 7 v - 4 v - 6 v - 5 v 100 s 1 ms 10 ms operation in this area limited by r ds(on) negative v ds , drain-to-source voltage (v) negative i d , drain current (a) t c = 25 c t j = 150 c single pulse 10 2 2 5 0.1 1 2 5 10 2 5 25 110 25 10 2 10 3 25 91082_04 2.0 1.0 0.1 10 -5 10 -4 10 -3 10 -2 0.1 1.0 10 p dm t 1 t 2 t 1 , square wave pulse duration (s) z thjc (t)/r thjc , normalized effective transien notes: 1. duty factor, d = t 1 /t 2 2. per unit base = r thjc = 3.12 c/w 3. t jm - t c = p dm z thjc (t) single pulse (transient thermal impedence) 0.2 0.05 0.02 0.01 91082_05 0.1 d = 0.5 0.5 0.2 0.05 0.02 0.01 25 25 25 25 25 25 thermal impedence (per unit)
www.vishay.com document number: 91082 4 s11-0512-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF9620, sihf9620 vishay siliconix fig. 6 - typical transconductance vs. drain current fig. 7 - typical source-drain diode forward voltage fig. 8 - breakdown voltage vs. temperature fig. 9 - normalized on-resistance vs. temperature fig. 10 - typical capacitance vs. drain-to-source voltage fig. 11 - typical gate charge vs. gate-to-source voltage 4.0 g fs ,transconductance (s) i d , drain current (a) - 1 - 2 - 3 - 4 - 5 0 t j = 25 c t j = - 55 c 91082_06 t j = 125 c 80 s pulse test v ds > i d(on) x r ds(on) max. 3.2 2.4 1.6 0.8 0.0 t j = 25 c t j = 150 c - 20 v sd , source-to-drain voltage (v) i dr , reverse drain current (a) - 2.0 - 6.8 - 5.6 - 4.4 - 3.2 91082_07 - 0.1 - 0.2 - 1.0 - 2 - 5 - 10 - 8.0 - 0.5 91082_08 t j , junction temperature (c) bv dss , drain-to-source breakdown 1.25 voltage (normalized) 1.15 0.75 0.85 0.95 1.05 - 40 160 120 80 40 0 91082_09 t j , junction temperature (c) r ds(on) , drain-to-source on resistance 2.5 (normalized) 2.0 0.0 0.5 1.0 1.5 - 40 160 120 80 40 0 i d = - 1.0 a v gs = - 10 v 91082_10 v ds , drain-to-source voltage (v) c, capacitance (pf) 500 0 100 200 300 400 0 - 50 - 40 - 30 - 20 - 10 c iss c rss c oss v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gs , c gd c gs + c gd c gs + c gd q g , total gate charge (nc) negative v gs , gate-to-source voltage (v) 20 16 12 8 0 4 04 16 12 8 v ds = - 40 v v ds = - 60 v for test circuit see figure 18 v ds = - 100 v 91082_11 i d = - 3.5 a 20
document number: 91 082 www.vishay.com s11-0512-rev. b, 21-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF9620, sihf9620 vishay siliconix fig. 12 - typical on-res istance vs. drain current fig. 13 - maximum drain current vs. case temperature fig. 14 - power vs. temperature derating curve fig. 15 - clamped inductive test circuit fig. 16 - clamped inductive waveforms fig. 17a - switching time test circuit fig. 17b - switching time waveforms 91082_12 i d , drain current (a) r ds(on) , drain-to-source r ds(on) measured with current pulse of 2.0 s duration. initial t j = 25 c. (heating effect of 2.0 s pulse is minimal.) 0 1 2 3 4 5 0 - 20 - 16 - 8 - 4 - 12 on resistance ( ) v gs = - 10 v v gs = - 20 v 150 negative i d , drain current (a) t c , case temperature (c) 0.0 1.5 2.0 2.5 3.0 3.5 25 91082_13 125 100 75 50 1.0 0.5 t c , case temperature (c) p d , power dissipation (w) 40 35 20 0 5 0 20 100 80 60 40 91082_14 140 120 30 25 15 10 0.05 d.u.t. l v ds + - v dd v gs = - 10 v var y t p to obtain required i l t p v dd = 0.5 v ds e c = 0.75 v ds e c i l v dd v ds t p e c i l pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. - 10 v + - v ds v dd v gs 10 % 90 % v ds t d(on) t r t d(off) t f
www.vishay.com document number: 91082 6 s11-0512-rev. b, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF9620, sihf9620 vishay siliconix fig. 18a - basic gate charge waveform fig. 18b - gate charge test circuit fig. 19 - for p-channel vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91082 . q gs q gd q g v g charge - 15 v d.u.t. - 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - p.w. period di/dt diode recovery dv/dt body diode forward drop body diode forward current driver gate drive inductor current d = p.w. period + - - - - + + + peak dio d e recovery d v/ d t test circuit ? dv/dt controlled by r g ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low stray inductance ? g round plane ? low leakage inductance current tran s former r g ? compliment n-channel of d.u.t. for driver v dd ? i s d controlled by duty factor d note note a. v gs = - 5 v for logic level and - 3 v drive device s v gs = - 10 v a d.u.t. l s d waveform d.u.t. v d s waveform v dd re-applied voltage ripple 5 % i s d rever s e recovery current
package information www.vishay.com vishay siliconix revison: 14-dec-15 1 document number: 66542 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220-1 note ? m* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c dim. millimeters inches min. max. min. max. a 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 d 14.33 15.85 0.564 0.624 e 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.10 6.71 0.240 0.264 j(1) 2.41 2.92 0.095 0.115 l 13.36 14.40 0.526 0.567 l(1) 3.33 4.04 0.131 0.159 ? p 3.53 3.94 0.139 0.155 q 2.54 3.00 0.100 0.118 ecn: x15-0364-rev. c, 14-dec-15 dwg: 6031 package picture a s e xian
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